Ansys Lumerical MQW simulates quantum mechanical behavior, allowing you to accurately characterize band structure, gain and spontaneous emission in multi-quantum well structures.
Lumerical MQW calculates optical and electronic properties of multi-quantum well stacks
Simulating quantum mechanical behavior in atomically thin semiconductor layers enables you to accurately characterize band structure, gain and spontaneous emission across multi-quantum well structures. MQW couples to Lumerical CHARGE, MODE and INTERCONNECT to enable design of lasers, SOAs, electro-absorption modulators, and other gain-driven active devices.
Lumerical MQW enables designers to design a wide range of gain elements for semiconductors. MQW provides deep physical insights when designing lasers, SOAs, electro-absorption modulators, and other gain-drive active devices.
Highly integrated photonic systems are necessary to meet demanding power and performance targets
With the ability to import compact models, use Ansys INTERCONNECT to design and simulate circuits with SOA. Use Lumerical MQW to design custom lasers and gain elements.
The development of compact and efficient SOAs is a current focal point for the photonics industry. There is a need for system-level models calibrated to foundry measurements that enable engineers to leverage custom SOAs at the circuit level with the confidence their manufactured circuit will work as expected. The availability of compact models for SOAs has been limited by the complexity of the physics involved and the challenge of solving the problem efficiently. With a compact model that has been parameterized to HHI’s foundry now available, designers can avoid the costly effort of parameter extraction and calibration. The foundry-calibrated model gives designers flexibility while saving them the time and cost of iterations usually associated with customized advanced devices.
New capabilities for Ansys Lumerical MQW includes support for improved productivity and simulation accuracy for modeling a wide variety of gain elements:
Accurately simulate the modulation response of an electro-absorption modulator (EAM) that can be fabricated in common III-V processes for integrated photonics circuits .
Define multi-quantum well structures with materials from the material database, set up simulation controls and run simulations (including parallel sweeps) using the new Ansys MQW user interface .
The electrical and thermal material database in the finite element IDE now includes material properties for III-V ternary and quaternary alloys for simulations with the MQW solver including k.p. model parameters.
Gain deep physical insight into laser and gain elements with Lumerical MQW. When coupled with Lumerical CHARGE, MODE and INTERCONNECT, Lumerical MQW provides all the simulation analyses needed to design lasers, SOAs, electro-absorption modulators and other gain-driven active photonic devices. MQW includes full-coupled quantum mechanical band structure calculations using k.p method, wavefunction and band diagram calculations, and gain and spontaneous emission analysis. Lumerical MQW works with a full materials library and will automatically build models for fractional semiconductor alloys.
Sophisticated laser model simulation provides integration and performance characterization for a better end product.
Build sophisticated laser models that incorporate tuning and external feedback effects, simulate and extract key parameters for TWLM and characterize steady-state and transient laser performance.
Lumerical MQW provides a fully-coupled quantum mechanical band structure calculation using k.p method.
Lumerical MQW includes a comprehensive material library with common III-V semiconductors. Automatically build models for fractional semiconductor alloys (eg. InGaAsP). MQW is script accessible and customizable.
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